october 2006 rev 1 1/7 7 STTH60L04W ultrafast high voltage rectifier mian product characteristics features and benefits ultrafast switching low reverse current low thermal resistance reduces switching and conduction losses description the STTH60L04W uses st 400 v technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. order codes i f(av) 60 a v rrm 400 v t j (max) 175 c v f (typ) 0.83 v t rr (max) 50 ns part number marking STTH60L04W stth60l04 k a do-247 STTH60L04W table 1. absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i f(rms) rms forward current 90 a i f(av) average forward current t c = 90 c = 0.5 per diode 60 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 600 a t stg storage temperature range -55 to + 175 c t j maximum operating junction temperature 175 c www.st.com
characteristics STTH60L04W 2/7 1 characteristics to evaluate the conduction losses use the following equation: p = 0.8 x i f(av) + 0.0033 i f 2 (rms) table 2. thermal resistance symbol parameter value (max). unit r th(j-c) junction to case 0.70 c/w table 3. static electrical characteristics (per diode) symbol parameter test conditions min. typ max. unit i r (1) 1. pulse test: t p = 5 ms, < 2% reverse leakage current t j = 25 c v r = v rrm 50 a t j = 150 c 100 1000 v f (2) 2. pulse test: t p = 380 s, < 2% forward voltage drop t j = 25 c i f = 60 a 1.2 v t j = 150 c 0.83 1.0 table 4. dynamic characteristics (per diode) symbol parameter test conditions min typ max unit t rr reverse recovery time t j = 25 c i f = 1 a di f /dt = 50 a/s v r = 30 v 66 90 ns i f = 1 a di f /dt = 200 a/s v r = 30 v 36 50 i rm reverse recovery current t j = 125 c i f = 60 a v r = 200 v di f /dt = 100 a/s 15 a s factor softness factor t j = 125 c i f = 60 a v r = 200 v di f /dt = 100 a/s 0.4 t fr forward recovery time t j = 25 c i f = 60 a di f /dt = 200 a/s v fr = 1.1 x v fmax 600 ns v fp forward recovery voltage t j = 25 c i f = 60 a di f /dt = 200 a/s v fr = 1.1 x v fmax 3.2 v
STTH60L04W characteristics 3/7 figure 1. conduction losses versus average forward current (per diode) figure 2. forward voltage drop versus forward current (per diode) 0 10 20 30 40 50 60 70 80 0 1020304050607080 p(w) =0.05 =0.1 =0.2 =0.5 =1 t i f(av) (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i fm ( a ) t j =150c (maximum values) t j =150c (typical values) t j =25c (maximum values) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values, per diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 z th(j-c) /r th(j-c) single pulse t p (s) 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f =i f(av) v r =200v t j =125c di f /dt(a/s) figure 5. reverse recovery time versus di f /dt (typical values, per diode) figure 6. reverse recovery charges versus di f /dt (typical values, per diode) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 t(ns) i f =i f(av) v r =200v t j =125c di f /dt(a/s) rr 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 q(nc) i f =i f(av) v r =200v t j =125c di f /dt(a/s) rr
characteristics STTH60L04W 4/7 figure 7. reverse recovery softness factor versus di f /dt (typical values, per diode) figure 8. relative variations of dynamic parameters versus junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s factor i f < 2 x i f(av) v r =200v t j =125c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 i rm &t rr s factor i f =i f(av) v r =200v reference: t j =125c q rr t j (c) figure 9. transient peak forward voltage versus di f /dt (typical values, per diode) figure 10. forward recovery time versus di f /dt (typical values, per diode) figure 11. junction capacitance versus reverse voltage applied (typical values, per diode) 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 300 350 400 450 500 v fp (v) i f =i f(av) t j =125c di f /dt(a/s) 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 400 450 500 t (ns) i f =i f(av) v fr =1.1 x v f max. t j =125c di f /dt(a/s) fr 100 1000 1 10 100 1000 c(pf) f=1mhz v osc =30mv rms t j =25c v r (v)
STTH60L04W package information 5/7 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.8 nm maximum torque value: 1.0 nm in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 5. do-247 dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 v h l5 l l3 v2 g f f3 l1 f2 l2 l4 v dia a d me
ordering information STTH60L04W 6/7 3 ordering information 4 revision history ordering type marking package weight base qty delivery mode STTH60L04W STTH60L04W do-247 4.4 g 30 tube date revision description of changes 26-oct-2006 1 first issue
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